Ohmic contact

An electrical junction between a conductor and a semiconductor whose current is proportional to voltage, allowing current to pass with little resistance.

Schottky barrier: An energy barrier at a metal–semiconductor interface that can impede carrier flow and produce rectifying behavior. A substantial interface barrier makes a metal–semiconductor junction non-ohmic.
Semiconductor: A material whose electrical conductivity lies between that of a conductor and an insulator and can be controlled. The semiconductor side supplies the mobile carriers that cross the contact.
Schottky diode: A semiconductor diode that uses a rectifying metal–semiconductor junction. Its rectifying contact contrasts with the nonrectifying junction sought in ohmic terminals.
Rectification: The preferential conduction of electrical current in one direction rather than the opposite direction. Strong rectification signals behavior unlike the nearly linear response of an ohmic contact.
Specific contact resistivity: A measure of electrical resistance at a contact interface, normalized by its area. It quantifies how much resistance the contact contributes beyond the semiconductor bulk.
Metal–semiconductor junction: An interface between a metal and a semiconductor, whose electrical behavior depends on their properties and interface conditions. An ohmic contact is the low-resistance, nonrectifying form of this junction.
Field-effect transistor: A transistor that controls current through a semiconductor channel using an electric field. Its source and drain contacts must inject and collect carriers with minimal voltage loss.
Schottky contact: A metal–semiconductor contact whose barrier produces rectifying current–voltage behavior. It is the principal electrical alternative to an ohmic contact at the same interface.
Thermionic emission: Carrier transport over an energy barrier by thermal excitation. It can carry current across a metal–semiconductor interface when a barrier remains.
Doping (semiconductor): The intentional addition of impurities to a semiconductor to change its carrier concentration. High doping near the interface can thin a barrier enough for efficient carrier flow.

Linked from 7 pages