MOSFET

A field-effect transistor in which an insulated gate controls current through a semiconductor channel. Its gate voltage changes the channel’s conductivity without requiring steady gate current.

MOS capacitor: A metal–insulator–semiconductor structure whose electric field changes charge at the semiconductor surface. The gate stack acts as a MOS capacitor, inducing charge that forms the channel.
Field-effect transistor: A transistor in which an electric field controls current through a semiconductor channel. MOSFETs are insulated-gate members of this broader transistor family.
CMOS: A circuit technology that combines complementary p-channel and n-channel MOSFETs. CMOS logic uses paired MOSFETs to achieve low static power consumption.
Bipolar junction transistor: A transistor in which a small base current controls a larger current between emitter and collector. Unlike a MOSFET, it uses minority-carrier injection and requires base current.
Threshold voltage: The gate-to-source voltage at which a transistor begins forming a conducting channel under specified conditions. It marks the approximate gate bias at which an inversion channel appears.
Semiconductor: A material whose electrical conductivity lies between that of a conductor and an insulator and can be controlled by doping or fields. The MOSFET channel and source–drain regions are formed in semiconductor material.
Digital logic: The representation and manipulation of information using discrete states, usually encoded as binary values. MOSFETs implement logic gates by switching between conducting and nonconducting states.
JFET: A field-effect transistor whose gate forms a reverse-biased p–n junction with its channel. Its junction gate contrasts with the MOSFET’s insulated gate.
Channel-length modulation: The increase in a MOSFET’s drain current with drain voltage after pinch-off, caused by a shortening effective channel. It explains why drain current is not perfectly constant in saturation.
Doping (semiconductor): The intentional addition of impurities to a semiconductor to alter its carrier concentration and electrical properties. Doping defines the source, drain, body, and channel behavior.

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