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The 13 pages that link to Static random-access memory, each with the reason it gives.

• TransistorRelated: Its bit cells show how transistor circuits can retain digital states while powered.

• Random-access memoryBroader topic: Its latch-based cells avoid refresh and provide fast access, at higher cost per bit.

• Flash memoryCompared with: SRAM offers faster access than flash but requires power to retain data.

• Dynamic random-access memoryCompared with: SRAM avoids refresh but uses more transistors per bit, making it less dense than DRAM.

• Read-only memoryCompared with: SRAM is fast and writable but does not retain data after power loss.

• CMOSBroader topic: Its standard bit cell uses CMOS inverters and access transistors.

• Complementary metal–oxide–semiconductorRelated: CMOS SRAM cells combine fast access with stable storage while powered.

• Computer memoryBroader topic: It is faster but less dense and more expensive than DRAM, suiting caches.

• Magnetic-core memoryCompared with: SRAM provides electronic random access without magnetic switching or destructive readout.

• Non-volatile memoryCompared with: SRAM retains data only while powered, despite avoiding DRAM’s refresh cycle.

• Magnetoresistive random-access memoryCompared with: SRAM is a common cache technology, but it requires continuous power to retain data.

• Volatile memoryBroader topic: Its circuit holds data without refresh, but loses it when power stops.

• Memory cellBroader topic: Its transistor feedback preserves a bit while power remains on.